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| 型號： | 933589550215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 74K |
| 代理商： | 933589550215 |
2002 Feb 04
6
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846; BC847; BC848
handbook, halfpage
MGT727
101
110
102
103
IC (mA)
0
600
500
400
300
200
100
hFE
(1)
(2)
(3)
Fig.6
DC current gain as a function of collector
current; typical values.
BC847B; VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT728
102
101
110
102
103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.7
Base-emitter voltage as a function of
collector current; typical values.
BC847B; VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT729
101
110
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
BC847B; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT730
101
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.9
Base-emitter saturation voltage as a
function of collector current; typical values.
BC847B; IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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