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| 型號： | 933589550215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 74K |
| 代理商： | 933589550215 |
2002 Feb 04
5
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846; BC847; BC848
handbook, halfpage
MGT723
101
110
102
103
IC (mA)
0
400
300
200
100
hFE
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
BC846A; VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT724
101
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBE
(mV)
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
BC846A; VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
MGT725
101
110
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
BC846A; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT726
101
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
BC846A; IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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