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參數(shù)資料
| 型號(hào)： | 933505290235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | 933505290235 |
December 1997
4
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
VDS = 10 V; VGS = 0; Tamb =25 °C for BF510 and BF511
VDS = 10 V; ID = 5 mA; Tamb =25 °C for BF512 and BF513
y-parameters (common source)
BF510
511
512
513
Input capacitance at f = 1 MHz
Cis
<
5555 pF
Input conductance at f = 100 MHz
gis
typ.
100
90
60
50
S
Feedback capacitance at f = 1 MHz
Crs
typ.
0.4
0.4 pF
<
0.5
0.5 pF
Transfer admittance at f = 1 kHz
yfs >
2.5
4.0
3.5 mS
VGS = 0 instead of ID = 5 mA
yfs >
6.0
7.0 mS
Transfer admittance at f = 100 MHz
y
fs
typ.
3.5
5.5
5.0
5.0 mS
Output capacitance at f = 1 MHz
Cos
<
3333 pF
Output conductance at f = 1 MHz
gos
<
60
80
100
120
S
Output conductance at f = 100 MHz
gos
typ.
35
55
70
90
S
Noise gure at optimum source admittance
GS = 1 mS; BS = 3 mS;
f = 100 MHz
F
typ.
1.5
1.5 dB
Fig.2
VGS = 0 for BF510 and BF511;
ID = 5 mA for BF512 and BF513;
f = 1 MHz; Tamb = 25 °C.
handbook, halfpage
0
typ
20
1.5
0
0.5
1
Crs
(pF)
VDS (V)
4
8
12
16
MDA275
Fig.3
VDS = 10 V; f = 1 kHz; Tamb =25 °C; typical
values.
handbook, halfpage
05
|yfs|
(mS)
ID (mA)
10
15
10
0
8
6
4
2
MDA276
BF511
BF510
BF512
BF513
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