參數(shù)資料
型號: 933505290235
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封裝: PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù): 3/7頁
文件大小: 37K
代理商: 933505290235
December 1997
3
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
BF510 to 513
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Mounted on a ceramic substrate of 8 mm
× 10 mm × 0.7 mm.
STATIC CHARACTERISTICS
Tamb =25 °C
Drain-source voltage
VDS
max.
20 V
Drain-gate voltage (open source)
VDGO
max.
20 V
Drain current (DC or average)
ID
max.
30 mA
Gate current
± I
G
max.
10 mA
Total power dissipation up to Tamb =40 °C (note 1)
Ptot
max.
250 mW
Storage temperature range
Tstg
65 to + 150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient (note 1)
Rth j-a
=
430 K/W
BF510
511
512
513
Gate cut-off current
VGS = 0.2 V; VDS =0
IGSS
<
10
10 nA
Gate-drain breakdown voltage
IS =0; ID =10 A
V(BR)GDO
>
20
20 V
Drain current
>
<
0.7
3.0
2.5
7.0
6
12
10
18
mA
VDS = 10 V; VGS =0
IDSS
Gate-source cut-off voltage
ID =10 A; VDS = 10 V
V(P)GS
typ.
0.8
1.5
2.2
3 V
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