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參數(shù)資料
| 型號(hào)： | 88EM8081XX-SAG2C000-T |
| 廠商： | MARVELL SEMICONDUCTOR INC |
| 元件分類(lèi)： | 穩(wěn)壓器 |
| 英文描述： | 2 A POWER FACTOR CONTROLLER, 120 kHz SWITCHING FREQ-MAX, PDSO8 |
| 封裝： | GREEN, SOIC-8 |
| 文件頁(yè)數(shù)： | 44/64頁(yè) |
| 文件大?。?/td> | 667K |
| 代理商： | 88EM8081XX-SAG2C000-T |
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Design and Applications Information
Current Sensing and Over Current Protection
Copyright 2010 Marvell
Doc. No. MV-S106340-01 Rev. B
August 6, 2010, Preliminary Information
Document Classification: Proprietary
Page 49
5.4.4
Cycle by Cycle Current Protection through OCP Pin
The voltage across Rsen and the OCP pin are used for cycle by cycle over current protection. This
protection helps to avoid the transformer saturation. A circuit consisting of an NPN transistor Q2 with
a low base to emitter parasitic capacitance is recommended for the design as shown in Figure 26.
The sensing voltage through Rsen should trigger and turn on the transistor Q2 during the over
current condition. Q2 then pulls the OCP pin to low and turns off the gate signal to the external
MOSFET.
For the design of the protection circuit a -2mV/°C (typical) temperature coefficient of Vbe should be
considered. The lowest voltage (Vbe) will be set at the junction temperature of 80°C.
Figure 26: Current Sensing and Cycle by Cycle Over Current Protection Circuit
At 80°C, the base to emitter volage can be calcuated from the following equation
Equation (34)
The highest Vbe voltage occurs when the junction temperature is -25°C.
Equation (35)
FB
Drain
VDD
Np
NS2
DR2
Rsen
VIN
Csen
ISNS
SW
SGND
Ccs
RCS1
Dsn
Rsn
Csn
Q1
Vsen
Vcs
PGND
VOUT
Cin
VDCin
88EM8080/81
RCS2
U3
R2
R1
Q2
OCP
R3
V
be
0.65V
2mV
80
25
–
() 0.54V
=
×
–
V
be
0.65V
2mV
25
–25
–
() 0.75V
=
×
–
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