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參數(shù)資料
| 型號(hào)： | 834B |
| 廠商： | Zetex Semiconductor |
| 英文描述： | SILICON 28V HYPERABRUPT VARACTOR DIODES |
| 中文描述： | 硅28V的HYPERABRUPT變?nèi)荻O管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 834B |
830 series
ISSUE 6 - JANUARY 2002
2
PART
Capacitance (pF)
V
R
=2V, f=1MHz
Min Q
V
R
=3V
f=50MHz
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN.
NOM.
MAX.
MIN.
MAX.
829A
7.38
8.2
9.02
250
4.3
5.8
829B
7.79
8.2
8.61
250
4.3
5.8
830A
9.0
10.0
11.0
300
4.5
6.0
830B
9.5
10.0
10.5
300
4.5
6.0
831A
13.5
15.0
16.5
300
4.5
6.0
831B
14.25
15.0
15.75
300
4.5
6.0
832A
19.8
22.0
24.2
200
5.0
6.5
832B
20.9
22.0
23.1
200
5.0
6.5
833A
29.7
33.0
36.3
200
5.0
6.5
833B
31.35
33.0
34.65
200
5.0
6.5
834A
42.3
47.0
51.7
200
5.0
6.5
834B
44.65
47.0
49.35
200
5.0
6.5
835A
61.2
68.0
74.8
100
5.0
6.5
835B
64.6
68.0
71.4
100
5.0
6.5
836A
90.0
100.0
110.0
100
5.0
6.5
836B
95.0
100.0
105.0
100
5.0
6.5
TUNING CHARACTERISTICS at Tamb = 25
°
C
PARAMETER
SYMBOL
MAX
UNIT
Forward current
I
F
200
mA
Power dissipation at T
amb
= 25 C SOT23
Power dissipation at T
amb
= 25 C SOD323
Power dissipation at T
amb
= 25 C SOD523
Operating and storage temperature range
P
tot
P
tot
P
tot
330
mW
330
mW
250
mW
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Reverse breakdown voltage
I
R
= 10uA
V
R
= 20V
V
R
= 3V, f = 1MHz
25
V
Reverse voltage leakage
0.2
20
nA
Temperature coefficient of capacitance
300
400
ppCm/ C
ELECTRICAL CHARACTERISTICS at Tamb = 25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 835A | SILICON 28V HYPERABRUPT VARACTOR DIODES |
| 831B | SILICON 28V HYPERABRUPT VARACTOR DIODES |
| 832A | SILICON 28V HYPERABRUPT VARACTOR DIODES |
| 832B | SILICON 28V HYPERABRUPT VARACTOR DIODES |
| 835B | SILICON 28V HYPERABRUPT VARACTOR DIODES |
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