參數(shù)資料
型號: 835B
廠商: Zetex Semiconductor
英文描述: SILICON 28V HYPERABRUPT VARACTOR DIODES
中文描述: 硅28V的HYPERABRUPT變?nèi)荻O管
文件頁數(shù): 1/6頁
文件大?。?/td> 140K
代理商: 835B
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics and high
Q. Low reverse current ensures very low phase noise
performance. Available in single or dual common cathode format
in a wide rage of miniature surface mount packages.
Features
Close tolerance C-V characteristics
High tuning ratio
Low I
R
(typically 200pA)
Excellent phase noise performance
High Q
Range of miniature surface mount packages
Applications
VCXO and TCXO
Wireless communications
Pagers
Mobile radio
*Where steeper CV slopes are required there is the 12V hyperabrupt range.
ZC930, ZMV930, ZV930, ZV931 Series
830 series
ISSUE 6 - JANUARY 2002
1
SILICON 28V HYPERABRUPT VARACTOR DIODES
相關(guān)PDF資料
PDF描述
836A SILICON 28V HYPERABRUPT VARACTOR DIODES
836B SILICON 28V HYPERABRUPT VARACTOR DIODES
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