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參數(shù)資料
| 型號： | 7P160ATA2003C25 |
| 英文描述： | Flash Memory Card(160M位閃速存儲器卡) |
| 中文描述： | 閃存卡（160米位閃速存儲器卡） |
| 文件頁數(shù)： | 64/66頁 |
| 文件大小： | 585K |
| 代理商： | 7P160ATA2003C25 |
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7PxxxATA20xxC25
June 2000 Rev. 5 – ECO #12935
64
White Electronic Designs Corporation
(508) 366-5151
Revision Record
Rev. Date
Contents of Modification
Drawn by
Approved by
0.0
June 16, 1998
Initial issue
Card Line up table
Card pin explanation
changes for WAIT and INPACK
New Block Diag and Note
CIS changes: reformat CIS and changes in
addresses: 004H, 010H, 012H, 050H, 05AH, 070H,
072H, 07AH, 080H, 088H,
ATA Command specifications
- 5. Identify Drive Information (table) (page 40)
Change of data field type information:
word
address 1
Change of total bytes:
word address 7 to 8
Change of total default value:
word address 51
DC Characteristics-3 (5 V)
Change of test conditions:
CMOS level between
to
CMOS level during
I
SP1
typ: 0.5 mA to 0.5/0.7/1.0 mA
I
SP1
max: TBD to 1.0/1.5/2.0 mA
I
CCR
(DC) typ: 50 mA to 40/40/40 mA
I
CCR
, I
CCW
(DC) max: TBD to 75/75/75 mA
I
CCW
(DC) typ: 0.5 mA to 45/45/45 mA
I
CCR
, I
CCW
(Peak) typ: 100 mA to 80 mA
I
CCR
, I
CCW
(Peak) max: TBD to 120 mA
DC Characteristics-4 (3.3 V)
Change of test conditions:
CMOS level between
to
CMOS level during
I
SP1
typ: 0.3 mA to 0.3/0.4/0.5 mA
I
SP1
max: TBD to 0.6/0.8/1.0 mA
I
CCR
, I
CCW
(DC) typ: 30 mA to 25/25/25 mA
I
CCR
, I
CCW
(DC) max: TBD to 50/50/50 mA
I
CCR
, I
CCW
(Peak) typ: 60 mA to 50/50/50 mA
I
CCR
, I
CCW
(Peak) max: TBD to 80/80/80 mA
Power On Reset Characteristics
tsu(RESET), tsu(VCC) min: 250 ms to 100 ms
Page 1: add “industrial temp range”
W. Brys
0.1
January 25,
1999
W. Brys
W. Wrotek
0.2
April 9, 1999
W. Brys
W. Wrotek
0.3
May 14, 1999
Add industrial temp range to the specification
Company name change
W. Brys
W. Wrotek
0.4
August 27, 1999 Page 1: Added the 112MB and 128MB capacities and their
part numbers to the list of ATA20 series cards.
In the Features section, type I housing was added
to the specifications to reflect the choice between
type I and type II housing.
In the Features section, the part number for the
Hitachi memory component was changed from
HN29W6411 to HN29W6411A, to reflect the new
memory component used for these cards.
In the features section, the data write endurance
was changed from 100,000 cycles to 300,000. This
change is resulting from the change in memory
M. Garrett
W. Brys
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| 7P-19.200MBP-T | 功能描述:19.2MHz Clipped Sine Wave, CMOS TCXO Oscillator Surface Mount 2.7 V ~ 5.5 V 10mA 制造商:txc corporation 系列:7P 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:TCXO 頻率:19.2MHz 功能:- 輸出:削峰正弦波，CMOS 電壓 - 電源:2.7 V ~ 5.5 V 頻率穩(wěn)定度:±280ppb 工作溫度:-40°C ~ 85°C 電流 - 電源（最大值）:10mA 等級:- 安裝類型:表面貼裝 大小/尺寸:0.197" 長 x 0.126" 寬（5.00mm x 3.20mm） 高度:0.065"（1.65mm） 封裝/外殼:6-SMD，無引線（DFN，LCC） 電流 - 電源（禁用）（最大值）:- 標準包裝:1 |
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