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參數(shù)資料
| 型號： | 7P008CLF1101C20 |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM CARD, 200 ns, XMA50 |
| 封裝： | CARD-50 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 7P008CLF1101C20 |
6
White Electronic Designs Corporation Marlborough MA (508) 485-4000
White Electronic Designs
Compact Linear Flash
Memory Card - CLF11 Series
VCC SUPPLY VOLTAGE 3V - 5V
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
IIL
Input Leakage Current
1, 2
±20
AVCC = VCCMAX
VIN =VCC or VSS
ILO
Output Leakage Current
1
±20
AVCC = VCCMAX
VOUT =VCC or VSS
VIL
Input Low Voltage
1
0
0.8
V
VIH
Input High Voltage
1
2.0
VCC+0.5
V
VOL
Output Low Voltage
1
0.4
V
IOL = 2mA
VOH
Output High Voltage
1
2.4
3.2
V
IOH = -2.0mA
VLKO
VCC Erase/Program
1
2.0
V
Lockout Voltage
Notes:
1. Values are the same for all card densities.
2. Exceptions: Leakage currents on CE1, OE and WE will be < 500 A when VIN = GND due to internal pull-up resistors. Leakage currents on RST
will be <150A when VIN=VCC due to internal pull-down resistor.
AC CHARACTERISTICS
READ TIMING PARAMETERS (1)
200ns
SYMBOL(PCMCIA)
Parameter
Min
Max
Unit
tC(R)
Read Cycle Time
200
ns
ta(A)
Address Access Time
200
ns
ta(CE)
Card Enable Access Time
200
ns
ta(OE)
Output Enable Access Time
100
ns
tsu(A)
Address Setup Time
20
ns
tsu(CE)
Card Enable Setup Time
0
ns
th(A)
Address Hold Time
20
ns
th(CE)
Card Enable Hold Time
20
ns
tv(A)
Output Hold from Address Change
0
ns
tdis(CE)
Output Disable Time from CE
90
ns
tdis(OE)
Output Disable Time from OE
90
ns
ten(CE)
Output Enable Time from CE
5
ns
ten(CE)
Output Enable Time from OE
5
ns
trec(RST)
Power Down recovery to Output Delay. VCC = 5V
500
ns
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