參數(shù)資料
型號(hào): 7MBR75UB120
廠商: Electronic Theatre Controls, Inc.
英文描述: IGBT MODULE (U series) 1200V / 75A / PIM
中文描述: IGBT模塊(U系列)1200伏/ 75A條/個(gè)人信息
文件頁數(shù): 6/7頁
文件大?。?/td> 164K
代理商: 7MBR75UB120
IGBT Module
7MBR75UB120
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Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
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Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
0
10
20
30
40
50
60
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
10
20
30
40
50
60
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
10
20
30
40
50
60
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=50A
Ic=25A
Ic=12.5A
0.1
1.0
10.0
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
30
60
90
120
150
C
G
Gate charge : Qg [ nC ]
0
VGE
VCE
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