參數(shù)資料
型號: 7MBR75UB120
廠商: Electronic Theatre Controls, Inc.
英文描述: IGBT MODULE (U series) 1200V / 75A / PIM
中文描述: IGBT模塊(U系列)1200伏/ 75A條/個人信息
文件頁數(shù): 3/7頁
文件大?。?/td> 164K
代理商: 7MBR75UB120
IGBT Module
7MBR75UB120
Characteristics (Representative)
Vcc=600V, Ic=75A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
20
40
60
80
100
120
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
20
40
60
80
100
120
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
20
40
60
80
100
120
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=100A
Ic=50A
Ic= 25A
0.1
1.0
10.0
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
50
100
150
200
250
300
C
G
Gate charge : Qg [ nC ]
0
VGE
VCE
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