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參數(shù)資料
| 型號(hào)： | 74HC4040DB,112 |
| 廠商： | NXP Semiconductors |
| 文件頁數(shù)： | 20/20頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC 12STAGE BINARY RIPPLE 16SSOP |
| 產(chǎn)品培訓(xùn)模塊： | Logic Packages |
| 標(biāo)準(zhǔn)包裝： | 78 |
| 系列： | 74HC |
| 邏輯類型： | 二進(jìn)制計(jì)數(shù)器 |
| 方向： | 上 |
| 元件數(shù)： | 1 |
| 每個(gè)元件的位元數(shù)： | 12 |
| 復(fù)位： | 異步 |
| 計(jì)數(shù)速率： | 98MHz |
| 觸發(fā)器類型： | 負(fù)邊沿 |
| 電源電壓： | 2 V ~ 6 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SSOP（0.209"，5.30mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SSOP |
| 包裝： | 管件 |
| 其它名稱： | 74HC4040DB 74HC4040DB-ND 935174930112 |
74HC_HCT4040
All information provided in this document is subject to legal disclaimers.
NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 20 March 2014
9 of 20
NXP Semiconductors
74HC4040; 74HCT4040
12-stage binary ripple counter
[1]
tpd is the same as tPHL, tPLH.
[2]
tt is the same as tTHL, tTLH.
[3]
CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD VCC2 fi N+ (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L VCC
2
f
o) = sum of outputs.
CPD
power
dissipation
capacitance
VI =GND to VCC
-20
-
pF
74HCT4040
tpd
propagation
delay
CP to Q0; see Figure 8
VCC = 4.5 V
-
19
40
-
50
-
60
ns
VCC =5.0 V; CL =15pF
-
16
-
ns
Qn to Qn+1; see Figure 8
VCC = 4.5 V
-
10
20
-
25
-
30
ns
VCC =5.0 V; CL =15pF
-
8
-
ns
tPHL
HIGH to LOW
propagation
delay
MR to Qn; see Figure 8
VCC = 4.5 V
-
23
45
-
56
-
68
ns
tt
transition time Qn; see Figure 8
VCC = 4.5 V
-
7
15
-
19
-
22
ns
tW
pulse width
CP input, HIGH or LOW;
see Figure 8
VCC = 4.5 V
16
7
-
20
-
24
-
ns
MR input, HIGH;
see Figure 8
VCC = 4.5 V
16
6
-
20
-
24
-
ns
trec
recovery time
MR to CP; see Figure 8
VCC = 4.5 V
10
2
-
13
-
15
-
ns
fmax
maximum
frequency
CP input; see Figure 8
VCC = 4.5 V
30
72
-
24
-
20
-
MHz
VCC =5.0 V; CL =15pF
-
79
-
MHz
CPD
power
dissipation
capacitance
VI =GND to VCC
-20
-
pF
Table 7.
Dynamic characteristics …continued
GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit, see Figure 9.
Symbol
Parameter
Conditions
25
C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max
Min
Max
Min
Max
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