參數(shù)資料
型號(hào): 74AUP1G126
廠商: NXP Semiconductors N.V.
英文描述: Low-Power buffer/line driver; 3-state
中文描述: 低功耗緩存/線驅(qū)動(dòng)器;3態(tài)
文件頁數(shù): 1/20頁
文件大?。?/td> 97K
代理商: 74AUP1G126
1.
General description
The 74AUP1G79 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specied for partial power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backow current through
the device when it is powered down.
The 74AUP1G79 provides the single positive-edge triggered D-type ip-op. Information
on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock
pulse. The D input must be stable one set-up time prior to the LOW-to-HIGH clock
transition for predictable operation.
2.
Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114-C exceeds 2000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 A (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specied from
40 °Cto+85 °C and 40 °C to +125 °C
74AUP1G79
Low-power D-type ip-op; positive-edge trigger
Rev. 01 — 12 September 2005
Product data sheet
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