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參數(shù)資料
| 型號(hào)： | 73224 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N- and P-Channel 40-V (D-S) MOSFET |
| 中文描述： | N和P溝道40 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | 73224 |
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
UIS Tested
APPLICATIONS
CCFL Inverter
Si4565DY
Vishay Siliconix
New Product
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
www.vishay.com
1
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
N-Channel
40
0.040 @ V
GS
= 10 V
5.2
8
0.045 @ V
GS
= 4.5 V
4.9
P Channel
P-Channel
0.054 @ V
GS
=
10 V
4.5
9
40
0.072 @ V
GS
=
4.5 V
3.9
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4565DY—E3
Si4565DY-T1—E3 (with Tape and Reel)
S
2
G
2
D
2
P-Channel MOSFET
N-Channel MOSFET
G
1
D
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
40
40
V
Gate-Source Voltage
12
16
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
T
A
= 70 C
I
D
5.2
4.2
3.9
3.1
4.5
3.6
3.3
2.7
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
30
A
1.7
0.9
1.7
0.9
L = 0 1 mH
L = 0.1 mH
13
8.5
16
13
mJ
Maximum Power Dissipatio
a
T
A
= 25 C
T
A
= 70 C
P
D
2.0
1.3
1.1
0.7
2
1.1
0.7
W
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
52
62.5
50
62.5
Steady State
90
110
85
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
32
40
30
40
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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