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參數(shù)資料
| 型號(hào)： | 71V65703S75PF8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, PLASTIC, TQFP-100 |
| 文件頁(yè)數(shù)： | 9/26頁(yè) |
| 文件大小： | 972K |
| 代理商： | 71V65703S75PF8 |
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6.42
IDT71V65703, IDT71V65903, 256K x 36, 512K x 18, 3.3V Synchronous ZBT SRAMs with
3.3V I/O, Burst Counter, and Flow-Through Outputs
Commercial and Industrial Temperature Ranges
17
Timing Waveform of Read Cycle(1,2,3,4)
NOTES:
1.
Q
(A
1)
represents
the
first
output
from
the
external
address
A
1.
Q
(A
2)
represents
the
first
output
from
the
external
address
A
2;
Q
(A
2+1
)represents
the
next
output
data
in
the
burst
sequence
of
the
base
address
A
2,
etc.
where
address
bits
A
0and
A
1are
advancing
for
the
four
word
burst
in
the
sequence
defined
by
the
state
of
the
LBO
input.
2.
CE
2timing
transitions
are
identical
but
inverted
to
the
CE
1and
CE
2
signals.
For
example,
when
CE
1and
CE
2are
LOW
on
this
waveform,
CE
2is
HIGH.
3.
Burst
ends
when
new
address
and
control
are
loaded
into
the
SRAM
by
sampling
ADV/
LD
LOW.
4.
R
/W
is
don’t
care
when
the
SRAM
is
bursting
(ADV/
LD
sampled
HIGH).
The
nature
of
the
burst
access
(Read
or
Write)
is
fixed
by
the
state
of
the
R/
W
signal
when
new
address
and
control
are
loaded
into
the
SRAM.
(C
E
N
high,
eli
m
in
at
es
cu
rr
e
n
t
L
-H
cl
o
c
k
ed
ge
)
Q
(A
2+
1
)
tC
D
R
ea
d
tC
LZ
tC
H
Z
tC
D
tC
D
C
Q
(A
2+
2
)
Q
(A
1
)
Q
(A
2
)
Q
(A
2+
3
)
Q
(A
2+
3
)
Q
(A
2
)
B
ur
s
t
R
ea
d
R
ea
d
D
A
T
A
O
U
T
(B
ur
s
t
W
ra
ps
ar
ou
nd
to
in
it
ia
l
s
ta
te
)
tC
D
C
tH
A
D
V
52
9
8
dr
w
06
R
/W
C
LK
A
D
V
/LD
A
D
R
E
S
C
E
1
,
C
E
2
(2
)
B
W
1
-
B
W
4
O
E
tH
E
tS
E
A
1
A
2
tC
H
tC
L
tC
Y
C
tS
A
D
V
tH
W
tS
W
tH
A
tS
A
tH
C
tS
C
E
N
,
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71V65703S75PFG | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 ZBT SYNC 3.3V FLOW-THRU 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V65703S75PFG8 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 ZBT SYNC 3.3V FLOW-THRU 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V65703S75PFGI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 ZBT SYNC 3.3V FLOW-THRU 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V65703S75PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 7.5ns 100-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 100TQFP - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:256Kx36 ZBT SYNC 3.3V FLOW-THRU SRAM |
| 71V65703S75PFI | 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 100TQFP - Trays 制造商:IDT 功能描述:SRAM SYNC SGL 3.3V 9MBIT 256KX36 7.5NS 100TQFP |
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