參數(shù)資料
型號： 71M6541F-IGTR/F
廠商： MAXIM INTEGRATED PRODUCTS INC
元件分類： 模擬信號調(diào)理
英文描述： SPECIALTY ANALOG CIRCUIT, PQFP64
封裝： LEAD FREE, LQFP-64
文件頁數(shù)： 45/165頁
文件大?。?/td> 2208K
代理商： 71M6541F-IGTR/F
v1.1
2008–2011 Teridian Semiconductor Corporation
139
6.2
Recommended External Components
Table 94: Recommended External Components
Name
From
To
Function
Value
Unit
C1
V3P3A
GNDA
Bypass capacitor for 3.3 V supply
≥0.1 ±20%
F
C2
V3P3D
GNDD
Bypass capacitor for 3.3 V output
0.1
±20%
F
CSYS
V3P3SYS
GNDD
Bypass capacitor for V3P3SYS
≥1.0 ±30%
F
CVDD
VDD
GNDD
Bypass capacitor for VDD
0.1
±20%
F
CVLCD
VLCD
GNDD
Bypass capacitor for VLCD pin (when
charge pump is used)
≥0.1 ±20%
F
XTAL
XIN
XOUT
32.768 kHz crystal – electrically similar to
ECS .327-12.5-17X, Vishay XT26T or
Suntsu
SCP6–32.768kHz TR (load
capacitance 12.5 pF).
32.768
kHz
CXS
XIN
GNDA
Load capacitor values for crystal depend on
crystal specifications and board parasitics.
Nominal values are based on 4 pF board
capacitance and include an allowance for
chip capacitance.
15
±10%
pF
CXL
XOUT
GNDA
10
±10%
pF
6.3
Recommended Operating Conditions
Unless otherwise specified, all parameters listed in 6.4 Performance Specifications and 6.5 Timing
Specifications are valid over the Recommended Operating Conditions provided in Table 95 below.
Table 95: Recommended Operating Conditions
Parameter
Condition
Min
Typ
Max
Unit
V3P3SYS and V3P3A Supply Voltage for
precision metering operation (MSN mode).
Voltages at VBAT and VBAT_RTC need
not be present.
VBAT=0 V to 3.8 V
VBAT_RTC =0 V to
3.8 V
3.0
3.6
V
VBAT Voltage (BRN mode). V3P3SYS is
below the 2.8 V comparator threshold.
Either V3P3SYS or VBAT_RTC must be
high enough to power the RTC module.
V3P3SYS < 2.8 V
and
Max (VBAT_RTC,
V3P3SYS) > 2.0 V
2.5
3.8
V
VBAT_RTC Voltage. VBAT_RTC is not
needed to support the RTC and non-
volatile memory unless V3P3SYS < 2.0 V
V3P3SYS<2.0 V
2.0
3.8
V
Operating Temperature
-40
+85
C
Notes:
1.
GNDA and GNDD must be connected together.
2.
V3P3SYS and V3P3A must be connected together.
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