參數(shù)資料
型號: 70V05S55G
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 8K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
封裝: 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68
文件頁數(shù): 2/22頁
文件大小: 159K
代理商: 70V05S55G
6.42
IDT70V05S/L
High-Speed 3.3V 8K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
10
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is determined by device characterization but is not production tested.
3. To access SRAM, CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and
temperature, the actual tDH will always be smaller than the actual tOW.
5. “X” in part number indicates power rating (S or L).
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
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