參數(shù)資料
型號： 70V05L35PF
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 8K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
封裝： 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
文件頁數(shù)： 18/22頁
文件大?。?/td> 159K
代理商： 70V05L35PF
6.42
IDT70V05S/L
High-Speed 3.3V 8K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD= 3.3V ± 0.3V)
Recommended DC Operating
Conditions
Maximum Operating Temperature
and Supply Voltage(1)
Absolute Maximum Ratings(1)
Capacitance (TA = +25°C, f = 1.0MHz)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 0.3V.
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
NOTES:
1. VIL> -1.5V for pulse width less than 10ns.
2. VTERM must not exceed VDD +0.3V.
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NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitznce when the input and output signals
switch from 0V to 3V or from 3V to 0V.
NOTE:
1. At VDD < 2.0V input leakages are undefined.
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