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參數(shù)資料
| 型號： | 6MBI100U4B-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT MODULE |
| 中文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 479K |
| 代理商： | 6MBI100U4B-120 |
H04-004-03a
MS5F6012
13
4
Storage temperature
Isolation
voltage
Screw
Torque
T
(*4) Biggest internal terminal resistance among arm.
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*4)
3375
3450
K
I
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
B value
B
R
T=25/50
o
C
3305
-
Ω
T=100
o
C
465
495
520
T=25
o
C
-
Items
Resistance
5000
between terminal and copper base (*1)
between thermistor and others (*2)
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
3.5
us
R lead
3.40
-
m
Ω
trr
-
2.00
2.10
1.65
1.75
2.15
-
1.80
-
IF=100A
-
Tj=125
o
C
-
-
0.35
Tj=25
o
C
V
-
-
-
VF
(terminal)
VF
(chip)
IF=100A
VGE=0V
Tj=25
o
C
Tj=125
o
C
0.41
0.07
1.00
0.30
tf
-
toff
RG=5.6
Ω
-
0.60
-
tr(i)
VGE=±15V
-
0.03
tr
Ic=100A
-
0.10
11
0.32
-
nF
ton
Vcc=600V
-
1.20
us
Cies
VCE=10V,VGE=0V,f=1MHz
-
6.5
8.5
-
-
-
1.90
2.10
2.05
-
V
Ic=100mA
Ic=100A
VGE=15V
VGE(th)
VCE=20V
4.5
VCE=0V
VGE=±20V
-
-
200
max.
Characteristics
min.
ICES
-
-
1.0
VGE=0V
VCE=1200V
Items
Conditions
Symbols
typ.
N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
Junction temperature
o
C
Viso
AC : 1min.
2500
VAC
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
V
V
Gate-Emitter voltage
Collector current
Ic
Continuous
Tc=25
o
C
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
A
-Ic
-Ic pulse
V
-
-
2.25
2.45
2.40
Tj
Tstg
W
Collector-Emitter voltage
mA
nA
Units
100
300
200
520
+150
100
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
IGES
Collector Power Dissipation
1 device
Pc
VCE(sat)
(chip)
200
1ms
1200
±20
Symbols
Conditions
Icp
1ms
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Maximum
Ratings
-40 to +125
VGES
Units
150
VCES
-
Mounting (*3)
VCE(sat)
(terminal)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 6MBI100U4B-120-50 | 制造商:Fuji Electric 功能描述:6 Pack IGBT 100A 1200V,6MBi100U4B-120-50 |
| 6MBI100U4B-170 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
| 6MBI100UB120 | 制造商:FUJITSU 功能描述:_ |
| 6MBI100UB-120 | 制造商:FUJITSU 功能描述:_ |
| 6MBI100UC-120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:1200V / 100A 6 in one-package |
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