參數(shù)資料
型號: 6MBI100U4B-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT MODULE
中文描述: 150 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-35
文件頁數(shù): 10/13頁
文件大小: 479K
代理商: 6MBI100U4B-120
H04-004-03a
MS5F6012
13
10
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=5.6
Ω
Vcc=600V, Ic=100A, VGE=±15V,
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=5.6
Ω
, Tj=25
o
C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=5.6
Ω
, Tj=125
o
C
Tj=25
o
C
+VGE=15V, -VGE <= 15V, RG >= 5.6
Ω
,
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj=125
o
C
Reverse bias safe operating area (max.)
Tj <= 125
o
C
10
100
1000
10000
0
50
Collector current : Ic [ A ]
100
150
200
ton
tr
toff
tf
S
10
100
1000
10000
0
50
100
150
200
Collector current : Ic [ A ]
tf
tr
toff
ton
S
10
100
1000
10000
1
10
100
1000
Gate resistance : RG [
Ω
]
toff
tr
ton
S
tf
0
5
10
15
20
0
50
100
150
200
Collector current : Ic [ A ]
Eoff(125
o
C)
Eon(25
o
C)
S
Eon(125
o
C)
Eoff(25
o
C)
Err(125
o
C)
Err(25
o
C)
0
10
20
30
40
1
10
100
1000
Gate resistance : RG [
Ω
]
S
Eon
Eoff
Err
0
100
200
300
0
400
Collector-Emitter voltage : VCE [ V ]
800
1200
1600
C
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