參數(shù)資料
型號(hào): 6LN04MH
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device Applications
中文描述: N溝道MOSFET的硅通用開(kāi)關(guān)器件應(yīng)用
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 46K
代理商: 6LN04MH
6LN04MH
No. A0458-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
Qgs
Qgd
VSD
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
IS=200mA, VGS=0V
1.0
0.2
0.2
0.83
nC
nC
nC
V
1.2
Package Dimensions
unit : mm (typ)
7019A-003
Switching Time Test Circuit
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0
0
0
2
1
2.0
0.65
0.3
0
0.15
1
2
3
0 to 0.02
PW=10
μ
s
D.C.
1%
P.G
50
G
S
D
ID=200mA
RL=150
VDD=30V
VOUT
6LN04MH
VIN
4V
0V
VIN
Rg
Rg=1.2k
50
300
100
150
200
250
0
0
60
20
140
100
180
80
40
160
120
200
0
1.0
0.8
0.6
0.1
0.2
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
0.4
0.9
0.7
0.3
0.5
IT11274
0
1.0
0.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
2.0
1.5
2.5
IT11275
IT11277
0
2
Gate-to-Source Voltage, VGS -- V
4
6
8
10
IT11276
10
0
2
1
3
5
7
4
6
8
9
T=
7
°
C
-5
°
C
Ta=25
°
C
VGS=1.0V
VDS=10V
8V
20
15V
--60
0
3
4
5
1
6
2
7
--40
--20
0
20
40
60
80
100
120
140
160
ID=50mA, VGS=2.5V
ID=10mA, VGS=1.5V
I
D
=100mA, V
GS
=4.0V
4V
ID=10mA
100mA
25
6V
2
°
C
50mA
ID -- VDS
ID -- VGS
D
S
O
S
O
Ambient Temperature, Ta --
°
C
D
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