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參數(shù)資料
| 型號(hào)： | 5SDA09P2313 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 850 A, 2300 V, SILICON, RECTIFIER DIODE |
| 封裝： | P1, 1 PIN |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 5SDA09P2313 |
5SDA 09P23
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DA/126/04 Jul-10
3 of 3
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 09P23..
5SDA 09P20..
2 300
2 000
V
VRSM
Non-repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 09P23..
5SDA 09P20..
2 300
2 000
V
IFAVm
Average forward current
Tc = 85 °C
850
A
IFRMS
RMS forward current
Tc = 85 °C
1 335
A
IRRM
Repetitive reverse current
VR = VRRM
50
mA
tp = 8.3 ms
14 400
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
13 500
A
tp = 8.3 ms
863 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
911 000
A
2s
Tj = 45 °C
70
kW
PRSM
Maximum avalanche power
dissipation
tp = 20 s, single pulse
Tj = 160 °C
50
kW
Tjmin -Tjmax
Operating temperature range
-40 ÷ 160
°C
TSTG
Storage temperature range
-40 ÷ 160
°C
Unless otherwise specified Tj = 160 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
0.830
V
rT
Forward slope resistance
IF1 = 800 A, IF2 = 2 400 A
0.300
m
VFM
Maximum forward voltage
IFM = 1 800 A, Tj = 25 °C
1.350
V
Rthjc
Thermal resistance junction to case
60
K/kW
Unless otherwise specified Tj = 160 °C
Notes:
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