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參數(shù)資料
| 型號(hào)： | 5SDA27Z1201 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 12000 V, SILICON, RECTIFIER DIODE |
| 封裝： | CERAMIC, PRESSPACK-7 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 118K |
| 代理商： | 5SDA27Z1201 |
VRRM
=
12 kV
IPULSE
=
60 kA
VF
=
7,32 V
rF
=
0.48 m
VDcmax
=
10 kV
Doc. No. 5SYA 04PP-01 Oct. 01
Features
Multichip Design with 6 Wafers in Series
For Single Pulse Applications
Voltage Sharing possibility
Compact Design
Glazed Ceramic Presspack Housing
High Reliability
VRRM
Repetitive reverse blocking voltage
12 kV
Tvj = 0 … 125°C
VDC
Permanent DC voltage for 100
FIT failure rate
8 kV
At Tj
≤ 50 °C. Ambient cosmic radiation
at sea level in open air.
VDC
Max. DC voltage
10 kV
For
≤ 60 sec at Tj ≤ 50°C
IPULSE
Max. Pulse Current
60 kA
Half sine wave, Tj
≤ 50°C, tp ≤ 500 s
di/dt
Max. current rate of rise
500 A/
s Single Pulse
I
2t
Limiting load integral
0,9 x10
6
A
2s
Tp = 10 ms, Tj = 25 °C
VF
Forward voltage drop
≤ 7.32 V
IF = 4000 A, Tj = 50 °C
VF0
Threshold voltage
5.40 V
Tj = 50 °C
rT
Slope resistance
0.48
m
Tj = 50 °C
The same diode is also available with sharing resistors direct mounted on the housing. See 5SDA 27Z1202
High Voltage High Current Diode
for Pulsed Power Applications
5SDA 27Z1201
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