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參數(shù)資料
| 型號： | 5962H9215315QMA |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 70 ns, CDIP28 |
| 封裝： | 0.600 X 1.400 INCH, 2.54 MM PITCH, SIDE BRAZED, CERAMIC, DIP-28 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大小： | 144K |
| 代理商： | 5962H9215315QMA |
6
AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(VDD = 5.0V±10%) (-55°C to +125°C)
Notes: * Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 500mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the rising edge of E2 or the falling edge of
E1, whichever comes last. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the falling edge of E2 or the rising edge of
E1, whichever comes first. SEU immunity does not affect the read parameters.
SYMBOL
PARAMETER
7156-40
MIN
MAX
7156-55
MIN
MAX
7156-70
MIN
MAX
UNIT
tAVAV
1
Read cycle time
40
55
70
ns
tAVQV
Read access time
40
55
70
ns
tAXQX
2
Output hold time
5
ns
tGLQX
2
G-controlled output enable time
3
0
ns
tGLQV
G-controlled output enable time (Read Cycle 3)
15
ns
tGHQZ
2
G-controlled output three-state time
15
ns
tETQX
2,3
E-controlled output enable time
3
0
ns
tETQV
3
E-controlled access time
40
55
70
ns
tEFQZ
1,4
E-controlled output three-state time
2
15
20
ns
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