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參數(shù)資料
| 型號(hào)： | 5962H0151601QXC |
| 元件分類： | PROM |
| 英文描述： | 8K X 8 OTPROM, 55 ns, CDIP28 |
| 封裝： | 0.600 X 1.400 INCH, 2.54 MM PITCH, CERAMIC, DIP-28 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 152K |
| 代理商： | 5962H0151601QXC |
3
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD = 3.0V to 3.6V; -55°C < TC < +125°C)
Notes:
* Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 1.5mA/MHz.
SYMBOL
PARAMETER
LIMITS
UNITS
VDD
Positive supply voltage
3.0 to 3.6
V
T
C
Case temperature range
-55 to +125
°C
VIN
DC input voltage
0 to VDD
V
SYMBOL
PARAMETER
CONDITION
MINIMUM
MAXIMUM
UNIT
VIH
High-level input voltage
.7VDD
V
IL
Low-level input voltage
.25V
DD
V
VOL1
Low-level output voltage
IOL = 100A, VDD = 3.0V
VSS + 0.05
V
VOL2
Low-level output voltage
IOL = 1.0mA, VDD = 3.0V
VSS + 0.1
V
OH1
High-level output voltage
I
OH = -100A, VDD = 3.0V
V
DD - 0.15
V
VOH2
High-level output voltage
IOH = -1.0mA VDD = 3.0V
VDD - 0.3
V
CIN
1
Input capacitance
= 1MHz, V
DD = 3.3V
15
pF
C
IO
1, 4
Bidirectional I/O capacitance
= 1MHz, V
DD = 3.3V
VOUT = 0V
15
pF
I
IN
Input leakage current
V
IN = 0V to VDD
-3
3
A
IOZ
Three-state output leakage
current
VO = 0V to VDD
V
DD = 3.6V
OE = 3.6V
-8
8
A
I
OS
2,3
Short-circuit output current
VDD = 3.6V, VO = VDD
VDD = 3.6V, VO = 0V
-90
90
mA
I
DD(OP)
5
Supply current operating
@18.2MHz (55ns product)
CMOS input levels (IOUT = 0),
VIL = 0.2V, VIH = 3.0V
V
DD, PE = 3.6V
50
mA
IDD(SB)
post-rad
Supply current standby
CMOS input levels,
VIL = VSS +0.25V
CE = VDD -025, VIH = VDD -0.25V
500
A
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