
5
DC ELECTRICAL CHARACTERISTICS (Pre and Post-Radiation)*
(-55
°C to +125°C for (C) screening and -40°C to +125°C for (W) screening)
Notes:
* Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019 at 3.0E5 rad(Si).
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. VIH = VDD2 (max), VIL = 0V.
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
VIH
High-level input voltage
.7*VDD2
V
VIL
Low-level input voltage
.3*VDD2
V
VOL
Low-level output voltage
IOL = 8mA,VDD2 =VDD2 (min)
.2*VDD2
V
VOH
High-level output voltage
IOH = -4mA,VDD2 =VDD2 (min)
.8*VDD2
V
CIN
1
Input capacitance
= 1MHz @ 0V
12
pF
CIO
1
Bidirectional I/O capacitance
= 1MHz @ 0V
12
pF
IIN
Input leakage current
VIN = VDD2 and VSS
-2
2
A
IOZ
Three-state output leakage current
VO = VDD2 and VSS
VDD2 = VDD2 (max), G = VDD2 (max)
-2
2
A
IOS
2, 3
Short-circuit output current
VDD2 = VDD2 (max), VO = VDD2
VDD2 = VDD2 (max), VO = VSS
-100
+100
mA
IDD1(OP1)VDD1 Supply current operating
@ 1MHz
Inputs : VIL = VSS + 0.2V,
VIH = VDD2 -0.2V , IOUT = 0
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
15
mA
IDD1(OP2)VDD1 Supply current operating
@ 66MHz,
Inputs : VIL = VSS + 0.2V,
VIH = VDD2 -0.2V, IOUT = 0
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
85
mA
IDD2(OP1)VDD2 Supply current operating
@ 1MHz
Inputs : VIL = VSS + 0.2V,
VIH = VDD2 -0.2V , IOUT = 0
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
1mA
IDD2(OP2)VDD2 Supply current operating
@ 66MHz,
Inputs : VIL = VSS + 0.2V,
VIH = VDD2 -0.2V, IOUT = 0
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
12
mA
IDD1(SB)
4
IDD2(SB)
4
Supply current standby @ 0Hz
CMOS inputs , IOUT = 0
E1 = VDD2 -0.2, E2 = GND
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
11
100
mA
A
IDD1(SB)
4
IDD2(SB)
4
Supply current standby A(16:0)
@ 66MHz
CMOS inputs , IOUT = 0
E1 = VDD2 - 0.2, E2 = GND,
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
11
100
mA
A