參數(shù)資料
型號(hào): 5962F0151601VYA
元件分類: PROM
英文描述: 8K X 8 OTPROM, 55 ns, CDFP28
封裝: 0.490 X 0.740 INCH, 1.27 MM PITCH, FP-28
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 88K
代理商: 5962F0151601VYA
1
Standard Products
UT28F64LV Radiation-Hardened 8K x 8 PROM
Data Sheet
April 2001
FEATURES
q Programmable, read-only, asynchronous, radiation-
hardened, 8K x 8 memory
-
Supported by industry standard programmer
q 55ns maximum address access time (-55 oC to
+125
oC)
q Three-state data bus
q Low operating and standby current
-
Operating: 50mA maximum @18.2 MHz
Derating: 1.5mA/MHz
-
Standby: 500
A maximum (post-rad)
q Radiation-hardened process and design; total dose
irradiation testing to MIL-STD-883, Method 1019
-
Total dose: 1E6 rad(Si)
-
LETTH(0.25) ~ 100 MeV-cm
2/mg
-
SEL Immune >128 MeV-cm2/mg
- Saturated Cross Section cm
2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion
-
Memory cell LET threshold: >128 MeV-cm
2/mg
q QML Q & V compliant part (check factory for
availability)
-
AC and DC testing at factory
q Packaging options:
-
28-pin 100-mil center DIP (0.600 x 1.4)
-
28-lead 50-mil center flatpack (0.490 x 0.74)
q V
DD: 3.0 to 3.6volts
q Standard Microcircuit Drawing 5962-01516
PRODUCT DESCRIPTION
The UT28F64LV amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
8K x 8 programmable memory device. The UT28F64LV PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the
UT28F64LV. The combination of radiation- hardness, fast
access time, and low power consumption make the UT28F64LV
ideal for high speed systems designed for operation in radiation
environments.
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
A(12:0)
CE
PE
OE
Figure 1. PROM Block Diagram
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