參數(shù)資料
型號(hào): 5962-9309101HYA
廠商: MICROSS COMPONENTS
元件分類: PROM
英文描述: EEPROM 5V MODULE, CDIP32
封裝: 0.600 INCH, CERAMIC, DIP-32
文件頁數(shù): 7/13頁
文件大?。?/td> 160K
代理商: 5962-9309101HYA
AS8E512K8
Rev. 3.2 01/10
Micross Components reserves the right to change products or specications without notice.
3
EEPROM
AS8E512K8
PIN CAPACITANCE (f= 1MHz, T = 25° C)(1)
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC<T
A<+125
oC; Vcc = 5V +10%)
OPERATING MODES
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Supply/Input Voltage Range1.........................-0.6V to +6.25V DC
Voltage on OE\ and A9....................................-0.6V to +13.5V DC
Voltage on all other pins..................................-0.6V to +6.25V DC
Storage Temperature.............................................-65
°C to +150°C
Operating Temperature, T
A (Ambient)................-55
oC to +125oC
Lead Temperature (soldering 10 seconds)........................+300oC
Maximum Junction Temperature**....................................+165
°C
NOTE: 1. Including NC pins, with respect to ground.
*Stresses greater than those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated
in the operation section of this specication is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airow.
NOTE: 1. X can be V
IL
or V
IH.
2. Refer to AC Programming Waveforms.
SYMBOL
CONDITIONS
MAX
UNIT
CADD, OE\, WE\
VIN = 0V, f = 1MHz
45
pF
CI/O
VOUT = 0V, f = 1MHz
50
pF
CCE\
VIN = 0V, f = 1MHz
10
pF
MODE
CE\
OE\
WE\
I/O
Read
VIL
VIH
DOUT
Write
2
VIL
VIH
VIL
DIN
Standby/Write Inhibit
VIH
X
1
X
High Z
Write Inhibit
X
VIH
Write Inhibit
X
VIL
X
Output Disable
X
VIH
X
High Z
PARAMETER
CONDITION
SYMBOL
MIN
MAX
UNITS
Input Load Current
VIN = OV to Vcc + 1V
ILI
-20
20
μΑ
Output Leakage Current
VI/O = OV to Vcc
ILO
-20
20
μΑ
Vcc Standby Current CMOS
CE\ = Vcc -0.2V to Vcc + 1
ISB1
mA
Vcc Standby Current TTL
CE\ = 2.2V to Vcc + 1
ISB2
20
mA
Vcc Active Current
F = 5 MHz; IOUT = 0 mA
ICC
120
mA
Input Low Voltage
VIL
0.8
V
Input High Voltage
VIH
2.0
V
Output Low Voltage
IOL = 2.1 mA
VOL
0.45
V
Output High Voltage
IOH = -400
μA
VOH1
2.4
V
Output High Voltage CMOS
IOH = -100
μA; Vcc = 4.5V
VOH2
4.2
V
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