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參數(shù)資料
| 型號(hào)： | 57C51C-70 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH SPEED 16K x 8 CMOS PROM/RPROM |
| 中文描述： | 高速16K的× 8的CMOS胎膜早破/ RPROM |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | 57C51C-70 |
PROGRAMMING INFORMATION
DC CHARACTERISTICS
(T
A
= 25 ± 5°C, V
CC
= 6.25 V ± 0.25 V, V
PP
= 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN
MAX
UNITS
I
LI
Input Leakage Current
(V
IN
= V
CC
or Gnd)
V
PP
Supply Current During
Programming Pulse
V
CC
Supply Current
Output Low Voltage During Verify
(I
OL
= 16 mA)
Output High Voltage During Verify
(I
OH
= –4 mA)
–10
10
μA
I
PP
60
mA
I
CC
25
mA
V
OL
0.45
V
V
OH
2.4
V
SYMBOLS
PARAMETER
MIN
TYP
MAX
UNITS
t
AS
t
DF
t
DS
t
PW
t
DH
t
CS
t
RF
Address Setup Time
Chip Disable Setup Time
Data Setup Time
Program Pulse Width
Data Hold Time
Chip Select Delay
V
PP
Rise and Fall Time
2
μs
ns
μs
μs
μs
ns
μs
30
2
100
2
200
30
1
WS57C51C
2-52
NOTE:
7. V
PP
must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS
(T
A
= 25 ± 5°C, V
CC
= 6.25 V ± 0.25 V, V
PP
= 12.75 ± 0.25 V)
PROGRAMMING WAVEFORM
ADDRESS STABLE
ADDRESSES
V
IH
V
IL
V
PP
V
IH
V
IH
V
IL
V
IL
CS1/V
PP
DATA
t
AS
t
DF
t
DS
t
PW
t
DH
t
CS
t
RF
t
RF
DATA OUT
DATA IN
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