參數(shù)資料
型號(hào): 534A4
英文描述: Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
中文描述: 紅外發(fā)光二極管(登記合格決定)
文件頁數(shù): 1/2頁
文件大?。?/td> 30K
代理商: 534A4
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-534A4
Description
The MIE-534A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
Package Dimensions
Features
l
High radiant power and high radiant intensity
l
Suitable for DC and high pulse current operation
l
Standard T-1 3/4 (
φ
5mm ) package, radiant angle : 30°
l
Peak wavelength
λ
p
= 940 nm
l
Good spectral matching to si-photodetector
Absolute Maximum Ratings
Parameter
Maximum Rating
Unit
Power Dissipation
120
mW
Peak Forward Current(300pps,10
μ
s pulse)
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
Storage Temperature Range
-55
o
C to +100
o
C
Lead Soldering Temperature
260
o
C for 5 seconds
11/20/2000
@ T
A
=25
o
C
o
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Unit: mm ( inches )
Unity Opto Technology Co., Ltd.
A
C
φ
5.05
(.199)
2.54 NOM.
(.100)
7.62
(.300)
1.00
(.039)
0.50 TYP.
(.020)
23.40 MIN.
(.921)
1.00MIN.
(.039)
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 3
SEE NOTE 2
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