參數(shù)資料
型號(hào): 534L3
英文描述: Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
中文描述: 紅外發(fā)光二極管(登記合格決定)
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 32K
代理商: 534L3
GaAlAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
Package Dimensions
The MIE-534L3 is an infrared emitting diode in GaAlAs
on GaAlAs technology molded in water clear plastic
package .
Features
l
Suitable for DC and high pulse current operation
l
Standard T-1 3/4 (
φ
5mm ) package
l
Peak wavelength
λ
p
= 880 nm
l
Good spectral matching to si-photodetector
l
Radiation angle : 30°
Absolute Maximum Ratings
Parameter
Maximum Rating
Unit
Power Dissipation
Peak Forward Current(300pps,10
μ
s pulse)
120
mW
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
11/20/2000
'@ T
A
=25
o
C
Unity Opto Technology Co., Ltd.
Unite: mm ( inches )
C
φ
5.05
(.200)
2.54NOM.
(.100)
SEE NOTE 2
7.62
(.300)
1.00
(.040)
0.50 TYP.
(.020)
23.40 MIN
(.920)
1.00MIN.
(.040)
A
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 3
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
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