參數(shù)資料
型號： 50B5814
英文描述： TRANSISTOR MOSFET TO-220
中文描述： 晶體管場效應(yīng)管- 220
文件頁數(shù)： 2/8頁
文件大小： 192K
代理商： 50B5814
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
61.2
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150
°
C)
Gate–Body Leakage Current (VGS =
±
15 Vdc, VDS = 0 Vdc)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
4.7
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 2.5 Adc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 5 Adc)
(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150
°
C)
RDS(on)
VDS(on)
—
0.34
0.45
Ohm
—
—
—
—
2.7
2.6
Vdc
Forward Transconductance
(VDS = 15 Vdc, ID = 2.5 Adc)
gFS
1.5
3.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
—
367
510
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
140
200
Transfer Capacitance
Crss
—
29
60
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
)
RG = 9.1
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
11
20
ns
Rise Time
(VDD = 30 Vdc, ID = 5 Adc,
VGS = 10 Vdc,
—
26
50
Turn–Off Delay Time
—
17
30
Fall Time
—
19
40
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
—
12
20
nC
(VDS = 48 Vdc, ID = 5 Adc,
—
3.0
—
—
5.0
—
—
5.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 5 Adc, VGS = 0 Vdc)
(IS = 5 Adc, VGS = 0 Vdc, TJ = 150
°
C)
VSD
—
—
1.72
1.34
3.5
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
97
—
ns
(IS = 5 Adc, VGS = 0 Vdc,
—
73
—
—
24
—
Reverse Recovery Stored Charge
QRR
—
0.42
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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