參數(shù)資料
型號: 50GD120DN2
英文描述: Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
中文描述: IGBT模塊
文件頁數(shù): 1/9頁
文件大?。?/td> 252K
代理商: 50GD120DN2
1
Oct-20-1997
BSM 50 GD 120 DN2
IGBT Power Module
Power module
3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
BSM 50 GD 120 DN2
V
CE
1200V 72A
I
C
Package
ECONOPACK 2K
Ordering Code
C67076-A2514-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Symbol
V
CE
V
CGR
Values
1200
Unit
V
1200
± 20
V
GE
I
C
50
72
A
I
Cpuls
100
144
P
tot
350
+ 150
W
T
j
T
stg
°C
-40 ... + 125
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
thJC
R
thJC
D
V
is
-
-
-
-
0.35
0.7
2500
16
11
F
40 / 125 / 56
K/W
Vac
mm
sec
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