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參數(shù)資料
| 型號： | 407MS8GE |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC功率放大器，5.0 - 7.0吉赫 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 320K |
| 代理商： | 407MS8GE |
A
5
5 - 150
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
General Description
Features
Functional Diagram
The HMC407MS8G & HMC407MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Transistor
(HBT) MMIC Power amplifiers which operate between
5 and 7 GHz. The amplifier requires no external match-
ing to achieve operation and is thus truly 50 Ohm
matched at input and output. The amplifier is pack-
aged in a low cost, surface mount 8 leaded package
with an exposed base for improved RF and thermal
performance. The amplifier provides 15 dB of gain,
+29 dBm of saturated power at 28% PAE from a +5.0V
supply voltage. Power down capability is available to
conserve current consumption when the amplifier is
not in use.
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5.0 V
Power Down Capability
No External Matching Required
Electrical Specifications,
T
A
= +25° C, Vs = 5V, Vpd = 5V
Typical Applications
This amplifier is ideal for use as a power
amplifier for 5.0 - 7.0 GHz applications:
UNII
HiperLAN
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5.0 - 7.0
5.6 - 6.0
GHz
Gain
10
15
18
12
15
18
dB
Gain Variation Over Temperature
0.025
0.035
0.025
0.035
dB/ °C
Input Return Loss
12
12
dB
Output Return Loss
15
15
dB
Output Power for 1 dB Compression (P1dB)
21
25
22
25
dBm
Saturated Output Power (Psat)
29
29
dBm
Output Third Order Intercept (IP3)
32
37
36
40
dBm
Noise Figure
5.5
5.5
dB
Supply Current (Icq)
Vpd = 0V/5V
0.002 / 230
0.002 / 230
mA
Control Current (Ipd)
Vpd = 5V
7
7
mA
Switching Speed
tON, tOFF
30
30
ns
HMC407MS8G
/
407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 7.0 GHz
v03.1006
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 407NA024NF1003 | 功能描述:環(huán)形MIL規(guī)格后蓋 RoHS:否 制造商:Amphenol PCD MIL 類型:MIL-DTL-38999 III, IV 系列:AS85049 產(chǎn)品類型:Environmental EMI/RFI Backshells 外殼類型:Straight 外殼大小:18 外殼材質(zhì):Aluminum Alloy |
| 407NS023NF1203 | 功能描述:環(huán)形MIL規(guī)格后蓋 RoHS:否 制造商:Amphenol PCD MIL 類型:MIL-DTL-38999 III, IV 系列:AS85049 產(chǎn)品類型:Environmental EMI/RFI Backshells 外殼類型:Straight 外殼大小:18 外殼材質(zhì):Aluminum Alloy |
| 407NS023NF2203 | 功能描述:環(huán)形MIL規(guī)格后蓋 RoHS:否 制造商:Amphenol PCD MIL 類型:MIL-DTL-38999 III, IV 系列:AS85049 產(chǎn)品類型:Environmental EMI/RFI Backshells 外殼類型:Straight 外殼大小:18 外殼材質(zhì):Aluminum Alloy |
| 407NS024NF1303 | 功能描述:環(huán)形MIL規(guī)格后蓋 RoHS:否 制造商:Amphenol PCD MIL 類型:MIL-DTL-38999 III, IV 系列:AS85049 產(chǎn)品類型:Environmental EMI/RFI Backshells 外殼類型:Straight 外殼大小:18 外殼材質(zhì):Aluminum Alloy |
| 407NS024NF1403 | 功能描述:環(huán)形MIL規(guī)格后蓋 RoHS:否 制造商:Amphenol PCD MIL 類型:MIL-DTL-38999 III, IV 系列:AS85049 產(chǎn)品類型:Environmental EMI/RFI Backshells 外殼類型:Straight 外殼大小:18 外殼材質(zhì):Aluminum Alloy |
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