參數(shù)資料
型號: 3SK299
廠商: NEC Corp.
英文描述: N-Channeal GaAs Dual-Gate MES FET(N溝道砷化鎵MES場效應(yīng)管)
中文描述: ? - Channeal砷化鎵雙柵場效應(yīng)晶體管(不適用溝道砷化鎵MES的場效應(yīng)管)
文件頁數(shù): 3/6頁
文件大小: 48K
代理商: 3SK299
3SK299
3
10
15
25
I
D
– Drain Current – mA
G
P
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
0
20
10
5
10
5
0
N
5
G
PS
NF
10
V
DS
– Drain to Source Voltage – V
G
P
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
0
20
10
5
0
N
5
NF
G
PS
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
I
D
= 10 mA
f = 900 MHz
20
S-PARAMETER (V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA)
FREQUENCY
MHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
0.999
1.000
0.998
0.974
1.005
0.942
0.968
0.920
0.952
0.898
0.915
0.879
–3.3
–7.2
–9.3
–13.4
–15.7
–19.1
–22.2
–25.2
28.9
–29.4
–35.1
–35.2
2.359
2.389
2.313
2.233
2.420
2.300
2.332
2.229
2.447
2.303
2.348
2.367
177.2
169.3
164.4
160.0
158.4
150.0
145.5
141.5
136.8
131.1
125.8
123.5
0.006
0.004
0.000
0.004
0.007
0.003
0.004
0.008
0.004
0.001
0.004
0.000
–122.3
123.0
–145.0
79.2
29.7
65.0
45.5
80.1
0.969
0.981
0.979
0.967
0.999
0.958
0.997
0 957
0.999
0.968
0.984
0.989
–1.3
–2.9
–3.3
5.6
–5.8
–7.7
–8.5
–9.4
–12.5
–11.1
–14.8
–13.0
8.3
50.9
71.4
91.1
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3SK301 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 30MA I(D) | SOT-143R
3SK302 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 30MA I(D) | SOT-143R