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參數(shù)資料
| 型號(hào)： | 3SK299 |
| 廠商： | NEC Corp. |
| 英文描述： | N-Channeal GaAs Dual-Gate MES FET(N溝道砷化鎵MES場(chǎng)效應(yīng)管) |
| 中文描述： | ? - Channeal砷化鎵雙柵場(chǎng)效應(yīng)晶體管（不適用溝道砷化鎵MES的場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 48K |
| 代理商： | 3SK299 |
3SK299
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
0
25
50
75
100
125
100
200
300
400
T
A
– Ambient Temperature – C
P
T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
DS
= 5 V
V
G2S
= 1.0 V
0.5 V
0 V
–0.5 V
–1.0
0
+1.0
V
G1S
– Gate 1 to Source Voltage – V
0
10
20
30
I
D
–1.0
0
+1.0
0
10
20
30
V
G1S
– Gate 1 to Source Voltage – V
y
f
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
G2S
= 1.0 V
0.5 V
0 V
–0.5 V
V
DS
= 5 V
f = 1 kHz
0
20
30
10
20
30
I
D
– Drain Current – mA
y
f
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G2S
= 1.0 V
V
DS
= 5 V
f = 1 kHz
V
G2S
= 0.5 V
10
–1.0
+1.0
1.0
2.0
V
G2S
– Gate 2 to Source Voltage – V
C
i
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
0
V
DS
= 5 V
f = 1 MHz
V
G2S
= 1 V at I
D
= 10 mA
V
G2S
= 1 V at I
D
= 5 mA
0
–3.0
+2.0
0
30
V
G2S
– Gate 2 to Source Voltage – V
G
P
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
V
DS
= 5 V
V
G2S
= 1 V
at I
D
= 10 mA
f = 900 MHz
–45
15
–15
–30
10
5
0
N
–2.0
–1.0
0
+1.0
G
PS
NF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK299(NE25118) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 3SK300 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK300ZR-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK301 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 30MA I(D) | SOT-143R |
| 3SK302 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 30MA I(D) | SOT-143R |
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