參數(shù)資料
型號: 3SK253
廠商: NEC Corp.
英文描述: RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
中文描述: 超高頻射頻放大器,調(diào)諧器N溝道硅雙柵MOS場效應(yīng)晶體管4個引腳微型模具
文件頁數(shù): 4/6頁
文件大?。?/td> 52K
代理商: 3SK253
3SK253
4
I
= 7 mA
(at V
DS
= 3.5 V,
V
= 3.0 V)
f = 1 MHz
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
– Gate2 to Source Voltage – V
C
o
–1.0
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
– Gate2 to Source Voltage – V
G
P
0
0
1.0
2.0
3.0
4.0
–1.0
–20
1.0
2.0
3.0
4.0
0
0.5
1.0
1.5
2.0
2.5
N
–10
0
10
20
I
= 7 mA
(at V
DS
= 3.5 V,
V
= 3.0 V)
f = 900 MHz
G
PS
NF
10
5
0
G
PS
AND NF TEST CIRCUIT AT f = 900 MHz
V
G2S
1 000 pF
47 k
1 000 pF
to 10 pF
to 10 pF
INPUT
50
L
1
47 k
RFC
L
2
to 10 pF
to 10 pF
50
1 000 pF
1 000 pF
V
G1S
V
DD
L
1
, L
2
; 35
×
5
×
0.2 mm
OUTPUT
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3SK254 N-Channel Silicon Dual-Gate MOSFET(應(yīng)用于RF放大器的N溝道雙門MOSFET)
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