參數(shù)資料
型號: 3SK253
廠商: NEC Corp.
英文描述: RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
中文描述: 超高頻射頻放大器,調(diào)諧器N溝道硅雙柵MOS場效應(yīng)晶體管4個引腳微型模具
文件頁數(shù): 2/6頁
文件大?。?/td> 52K
代理商: 3SK253
3SK253
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown Voltage
BV
DSX
18
V
V
G1S
= V
G2S
= –2 V, I
D
= 10
μ
A
Drain Current
I
DSX
0.5
7.0
mA
V
DS
= 3.5 V, V
G2S
= 3 V, V
G1S
= 0.75 V
Gate1 to Source Cutoff Voltage
V
G1S(off)
–1.0
0
+1.0
V
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 10
μ
A
Gate2 to Source Cutoff Voltage
V
G2S(off)
0
0.5
1.0
V
V
DS
= 3.5 V, V
G1S
= 3 V, I
D
= 10
μ
A
Gate1 Reverse Current
I
G1SS
±
20
nA
V
DS
= 0, V
G2S
= 0, V
G1S
=
±
6 V
Gate2 Reverse Current
I
G2SS
±
20
nA
V
DS
= 0, V
G1S
= 0, V
G2S
=
±
6 V
Forward Transfer Admittance
|y
fs
|
14
19
24
mS
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 1 kHz
Input Capacitance
C
iss
1.5
2.0
2.5
pF
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 1 MHz
Output Capacitance
C
oss
0.5
1.0
1.5
pF
Reverse Transfer Capacitance
C
rss
0.01
0.03
pF
Power Gain
G
ps
15
18
21
dB
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 900 MHz
Noise Figure
NF
1.8
3.0
dB
I
DSX
Classification
Rank
U1G/UAG
*
Marking
U1G
I
DSX
(mA)
0.5 to 7.0
* Old specification / New specification
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