參數(shù)資料
型號: 3SK166A-0
廠商: Sony Corporation
英文描述: GaAs N-channel Dual Gate MES FET
中文描述: 砷化鎵N溝道雙柵場效應晶體管
文件頁數(shù): 2/5頁
文件大小: 72K
代理商: 3SK166A-0
– 2 –
3SK166A
–2.0
–1.5
–1.0
–0.5
0
20
60
70
80
100
(V
DS
= 5V)
V
G2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.5V
40
0
2
4
6
8
0
20
40
60
100
V
G1S
= 0V
–0.4V
–0.6V
–0.8V
–1.4V
–1.6V
80
–0.2V
–1.0V
–1.2V
(V
G2S
= 1.5V)
V
G1S
– Gate 1 to source voltage [V]
I
D
I
D
vs. V
G1S
V
DS
– Drain to source voltage [V]
I
D
I
D
vs. V
DS
Typical Characteristics
(Ta = 25°C)
Electrical Characteristics
(Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
I
DSX
I
G1SS
I
G2SS
I
DSS
V
G1S
(OFF)
V
G2S
(OFF)
gm
Ciss
Crss
NF
Ga
V
DS
= 8V
V
G1S
= –4V
V
G2S
= 0V
V
G1S
= –5V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= –5V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 5V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 5V
I
D
= 100μA
V
G2S
= 0V
V
DS
= 5V
I
D
= 100μA
V
G1S
= 0V
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1kHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1MHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 800MHz
20
–1
–1
25
18
40
1.3
25
1.2
20
100
–20
–20
80
–4
–4
2.0
40
2.5
μA
μA
μA
mA
V
V
ms
pF
fF
dB
dB
Symbol
Condition
Min.
Typ.
Max.
Unit
I
DSS
classification
Product name classification
3SK166A-0
3SK166A-2
I
DSS
RANK
20 to 80mA
45 to 80mA
相關(guān)PDF資料
PDF描述
3SK166A-2 GaAs N-channel Dual Gate MES FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
3SK166A-2 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GaAs N-channel Dual Gate MES FET
3SK176A 制造商:NEC 制造商全稱:NEC 功能描述:RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
3SK177 制造商:NEC 制造商全稱:NEC 功能描述:RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
3SK177-T1 制造商:NEC Electronics Corporation 功能描述:
3SK180 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency General-Purpose Amp Applications