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參數(shù)資料
| 型號(hào)： | 3SK176A |
| 廠商： | NEC Corp. |
| 英文描述： | RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
| 中文描述： | 射頻放大器。和FOR CATV調(diào)諧?混合機(jī)，雙通道硅柵MOS場效應(yīng)晶體管4個(gè)引腳微型模具 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 3SK176A |
1995
1989
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK176A
Document No. P10567EJ2V0DS00 (2nd edition)
(Previous No. TD-2263)
Date Published August 1995 P
Printed in Japan
FEATURES
High Power Gain:
Low Noise Figure:
G
PS
= 24 dB TYP. (f = 470 MHz)
NF = 2.0 dB TYP. (f = 470 MHz)
NF = 1.0 dB TYP. (f = 55 MHz)
Embossed Type Taping
Automatically Mounting:
Suitable for use as RF amplifier and Mixer in CATV tuner.
Small Package:
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*
R
L
≥
10 k
V
DSX
V
G1S
V
G2S
I
D
P
D
T
ch
T
stg
18
V
V
V
±
8 (
±
10)
*
±
8 (
±
10)
*
25
200
125
–55 to +125
mA
mW
°
C
°
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PACKAGE DIMENSIONS
(Unit: mm)
RF AMP. AND MIXER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
2.8
+0.2
1.5
+0.2
0
+
–
0
+
–
0
+
–
0
+
–
1
+
–
0
+
–
0
0
5°
5°
5°
5°
2
(
(
0
0
1
2
4
3
1. Source
2. Drain
3. Gate2
4. Gate1
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
SYMBOL
BV
DSX
MIN.
18
TYP.
MAX.
UNIT
V
TEST CONDITIONS
V
G1S
= V
G2S
= –2 V, I
D
= 10
μ
A
I
DSX
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
| y
fs
|
1.0
0
0
10
+1.0
+1.0
±
20
±
20
mA
V
V
nA
nA
mS
V
DS
= 5 V, V
G1S
= 0.75 V, V
G2S
= 4 V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
μ
A
V
DS
= 6 V, V
G1S
= 3 V, I
D
= 10
μ
A
V
DS
= 0, V
G2S
= 0, V
G1S
=
±
10 V
V
DS
= 0, V
G1S
= 0, V
G2S
=
±
10 V
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA
f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 MHz
22
25.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure 1
Noise Figure 2
C
iss
C
oss
C
rss
G
PS
NF1
NF2
2.2
1.3
2.7
1.6
0.015
24.0
2.0
1.0
3.2
1.9
0.03
pF
pF
pF
dB
dB
dB
21.0
3.5
2.5
I
DSX
Classification
Class
Marking
I
DSX
(mA)
U87/UHG
*
U87
1.0 to 6.0
U88/UHH
*
U88
4.0 to 10.0
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 470 MHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 55 MHz
*
Old Specification/New Specification
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