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參數(shù)資料
| 型號： | 3SK131 |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 3SK131 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
Document No. P12449EJ2V0DS00 (2nd edition)
(Previous No. TC-1508)
Date Published March 1997 N
Printed in Japan
1983
FEATURES
Suitable for use as RF amplifier in VHF TV tuner.
Low C
rss
: 0.05 pF TYP.
High G
ps
: 23 dB TYP.
Low NF : 1.3 dB TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSX
V
G1S
V
G2S
I
D
P
T
T
ch
T
stg
20
8
8
25
200
125
V
V
V
mA
mW
C
C
55 to +125
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown Voltage
BV
DSX
20
V
V
G1S
= V
G2S
= 2 V, I
D
= 10 A
Drain Current
I
DSS
7
10
25
mA
V
DS
= 6 V, V
G2S
= 3 V, V
G1S
= 0
Gate1 to Source Cutoff Voltage
V
G1S(OFF)
2.0
V
V
DS
= 8 V, V
G2S
= 0, I
D
= 5 A
Gate2 to Source Cutoff Voltage
V
G2S(OFF)
1.5
V
V
DS
= 8 V V
G1S
= 0, I
D
= 5 A
Gate1 Reverse Current
I
G1SS
20
nA
V
DS
= 0, V
G1S
= 8 V, V
G2S
= 0
Gate2 Reverse Current
I
G2SS
20
nA
V
DS
= 0, V
G2S
= 8 V, V
G1S
= 0
Forward Transfer Admittance
y
fs
22
28
mS
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 kHz
Input Capacitance
C
iss
4.0
5.0
6.5
pF
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
Output Capacitance
C
oss
2.2
2.9
3.7
pF
f = 1 MHz
Reverse Transfer Capacitance
C
rss
0.05
0.08
pF
Power Gain
C
ps
21
24
dB
V
DS
= 10 V, V
G2S
= 5 V, I
D
= 10 mA
Noise Figure
NF
1.2
2.5
dB
f = 200 MHz
I
DSS
classification V11 7-13 mA V12 11-19 mA V13 17-25 mA
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Gate 1
Source
Drain
Gate 2
5
°
5
°
5
°
5
°
0
0
2
(
(
0
0
1
+
3
0
+
0
0
4
1
3
2
+
0
2.8
+0.2
0.3
+0.2
0.1
1.5
0
+
0
0
+
0
0
+
0
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