- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358641 > 3N164 (Vishay Intertechnology,Inc.) P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V,最大導(dǎo)通電阻300Ω的P溝道增強(qiáng)型MOSFET晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 3N164 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V,最大導(dǎo)通電阻300Ω的P溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | P通道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓- 30V時(shí)，最大導(dǎo)通電阻300Ω的P溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 3N164 |
3N163/3N164
4
Siliconix
P-37404—Rev. D, 04-Jul-94
Typical Characteristics (Cont’d)
Capacitance vs. Gate-Source Voltage
Drain-Source Leakage Current
vs. Temperature
Common-Source Output Conductance
vs. Drain Voltage
Common-Source Output Conductance
vs. Drain Current
C
I
D
– Drain Current (mA)
V
DS
– Drain-Source Voltage (V)
T
A
– Temperature ( C)
V
GS
– Gate-Source Voltage (V)
3.0
0
–12
–16
–8
–4
–20
0
0.6
1.2
1.8
2.4
100 nA
10
70
90
50
30
110
10 nA
1 nA
100 pA
10 pA
130
150
10 k
0
–20
–25
–15
–10
–30
1 k
100
10
–5
1000
–0.1
–100
–10
–1.0
100
10
1
I
D(on)
= –10 mA
C
iss
C
oss
C
rss
I
S(off)
I
D(off)
–1 mA
–
D
I
,
S
S
g
o
–
V
DS
= –15 V
V
BS
= 0 V
f= 1 kHz
V
DS
= –15 V
V
BS
= 0 V
f= 1 MHz
V
BS
= 0 V
f= 1 kHz
S
g
o
–
Switching Time Test Circuit
510
R
L
51
V
IN
To Scope
–V
DD
V
OUT
To Scope
–V
DD
50%
10%
90%
t
d(on)
t
d(off)
t
r
t
f
0 V
–12 V
0 V
V
IN
V
OUT
Input pulse: t
, t
< 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
t
r
< 360 ps
R
IN
= 1 M
C
= 2 pF
BW = 500 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3N170 | N-CHANNEL MOSFET ENHANCEMENT MODE |
| 3N170-71 | 30V N-Channel PowerTrench MOSFET |
| 3N170 | 30V N-Channel PowerTrench MOSFET |
| 3N170 | PTSE 8C 8#16 PIN RECP |
| 3N170-1 | N-CHANNEL MOSFET ENHANCEMENT MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3N164_TO-72 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an enhancement mode P-Channel Mosfet |
| 3N164-E3 | 功能描述:MOSFET 30V 3mA 375mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 3N165 | 制造商:Calogic LLC 功能描述: 制造商:SOLITRON 功能描述: |
| 3N165_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a monolithic dual enhancement mode P-Channel Mosfet |
| 3N165-6 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。