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參數(shù)資料
| 型號： | 3N164 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V,最大導通電阻300Ω的P溝道增強型MOSFET晶體管) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓- 30V時，最大導通電阻300Ω的P溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 3N164 |
3N163/3N164
Siliconix
P-37404—Rev. D, 04-Jul-94
3
Typical Characteristics
V
GS
= –10 V
–9 V
–8 V
–7 V
–6 V
Output Characteristics
Drain-Source On-Resistance
vs. Gate-Source Voltage
Low-Level Drain-Source On-Voltage
vs. Gate-Source Voltage
Common-Source Forward Transconductance
vs. Drain Current
r
D
–
–
V
D
–
I
D
V
GS
– Gate-Source Voltage (V)
I
D
– Drain Current (mA)
V
DS
– Drain-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
–50
0
–30
–40
–20
–10
–50
–40
–30
–20
–10
0
V
BS
= 0 V
V
GS
= –20 V
–18 V
–16 V
–14 V
–12 V
–10 V
–8 V
–6 V
Transfer Characteristics
–
I
D
V
GS
– Gate-Source Voltage (V)
0
–12
–16
–20
–8
–4
–50
–40
–30
–20
–10
0
Low-Level Output Characteristics
–
I
D
A
V
DS
– Drain-Source Voltage (V)
–1000
0
–0.2
0.2
0.4
–0.4
–800
–600
–400
–200
0
200
400
600
800
1000
–5 V
–4 V
10 k
–0.1
–1
–0.01
–10
1 k
100
10
125 C
T
A
= 25 C
100 k
0
–20
10 k
1 k
100
–10
T
A
= 125 C
T
A
= 25 C
2.5
2.0
1.5
1.0
0.5
0
0
–20
–10
I
D
= 100 A
V
BS
= 0 V
10 mA
1 mA
g
f
V
DS
= –15 V
V
BS
= 0 V
f= 1 kHz
V
DS
= V
GS
V
BS
= 0 V
V
BS
= 0 V
A
I
D
= 0.1 mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 3N164_TO-72 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:an enhancement mode P-Channel Mosfet |
| 3N164-E3 | 功能描述:MOSFET 30V 3mA 375mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 3N165 | 制造商:Calogic LLC 功能描述: 制造商:SOLITRON 功能描述: |
| 3N165_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a monolithic dual enhancement mode P-Channel Mosfet |
| 3N165-6 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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