參數(shù)資料
型號： 3N163-4
廠商： Linear Integrated Systems
英文描述： P-CHANNEL ENHANCEMENT MODE
中文描述： P溝道增強型
文件頁數(shù)： 1/2頁
文件大?。?/td> 28K
代理商： 3N163-4
P-Channel Enhancement Mode
MOSFET General Purpose
Ampifier Switch
3N163 /3N164
FEATURES
Very High Input Impedance
High Gate Breakdown
Fast Switching
Low Capacitance
ABSOLUTE MAXIMUM RATINGS (Note 1)
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
Static Gate-Source Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
30V
Transient Gate-Source Voltage (Note 2). . . . . . . . . . . .
±
125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature. . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N163-64
X3N163-64
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
PIN CONFIGURATION
TO-72
G
D
C
S
1503
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
3N163
3N164
UNITS
TEST CONDITIONS
MIN MAX MIN MAX
I
GSS
Gate-Body Leakage Current
-10
-10
pA
V
GS
= -40V, V
DS
= 0 (3N163)
V
GS
= -30V, V
DS
= 0 (3N164)
-25
-25
T
A
= +125
o
C
BV
DSS
Drain-Source Breakdown Voltage
-40
-30
V
I
D
= -10
μ
A, V
GS
= 0
BV
SDS
Source-Drain Breakdown Voltage
-40
-30
I
S
= -10
μ
A, V
GD
= 0, V
BD
= 0
V
GS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
V
DS
= V
GS
, I
D
= -10
μ
A
V
GS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
V
DS
= -15V, I
D
= -10
μ
A
V
GS
Gate Source Voltage
-2.5
-6.5
-2.5
-6.5
V
DS
= -15V, I
D
= -0.5mA
I
DSS
Zero Gate Voltage Drain Current
200
400
pA
V
DS
= -15V, V
GS
= 0
I
SDS
Source Drain Current
400
800
V
SD
= 15V, V
GS
= V
DB
= 0
r
DS(on)
Drain-Source on Resistance
250
300
ohms
V
GS
= -20V, I
D
= -100
μ
A
I
D(on)
On Drain Current
-5.0 -30.0 -3.0 -30.0
mA
V
DS
= +15V, V
GS
= -10V
相關(guān)PDF資料
PDF描述
3N164 Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-3 RoHS Compliant: No
3N165 Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
3N163-D 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Siliconix 功能描述:TO72 PCH MOSFET 40V 25R
3N163-D-E3 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Siliconix 功能描述:SMALL SIGNAL TRANSISTOR - Bulk
3N163-E3 功能描述:MOSFET 40V 5mA 375mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
3N163-E3 制造商:Vishay Siliconix 功能描述:P CH MOSFET -40V 50mA TO-206AF
3N164 功能描述:MOSFET 30V 3mA 375mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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