- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358641 > 3LP02N (Sanyo Electric Co.,Ltd.) P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速轉(zhuǎn)換應(yīng)用的P溝道硅MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | 3LP02N |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速轉(zhuǎn)換應(yīng)用的P溝道硅MOSFET) |
| 中文描述： | 個(gè)P - MOSFET的超高通道硅高速開關(guān)應(yīng)用（超高速轉(zhuǎn)換應(yīng)用的P溝道硅MOSFET的） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | 3LP02N |
81000TS (KOTO) TA-2010 No.6553-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
3LP02N
Ultrahigh-Speed Switching Applications
Ordering number:ENN6553
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C
Package Dimensions
unit:mm
2178
[3LP02N]
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
1 : Source
2 : Drain
3 : Gate
SANYO : NP
C
C
Marking : XD
Continued on next page.
5.0
4.0
0
2
1
5
0.45
0.5
4.0
0.44
1.3
1.3
1
2
3
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
e
g
g
a
V
a
V
)
C
D
s
p
D
r
w
e
p
m
e
p
m
e
e
(
c
o
c
o
t
t
o
P
e
T
e
T
S
S
-
D
-
G
n
D
n
D
w
o
n
a
h
C
a
S
V
V
S
S
S
S
D
G
ID
IP
D
PD
c
T
g
T
0
0
3
1
–
±
2
–
8
–
4
5
1
5
1
+
V
V
A
A
W
e
C
e
C
e
a
l
n
e
g
)
s
W
P
≤
e
y
c
y
d
,
μ
0
1
≤
%
1
n
o
p
h
0
0
o
5
5
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
–
m
p
x
a
m
e
g
a
V
t
e
C
e
C
n
w
o
d
k
a
n
D
a
k
a
e
B
e
g
e
L
e
c
o
a
V
c
o
g
a
V
a
T
d
w
S
-
D
-
Z
-
G
f
C
r
F
V
S
S
D
S
S
)
|
s
RS
D
o
RS
D
o
RS
D
o
)
R
D
G
G
|
B
I
I
(
ID
VS
D
VS
G
VS
D
VS
D
ID
=
ID
=
ID
=
V
,
V
,
I
V
I
V
0
A
m
0
A
m
A
m
,
V
V
0
1
–
0
1
–
0
5
–
0
1
–
A
0
3
–
8
±
=
1
–
=
=
m
1
=
–
=
S
G
S
D
D
D
V
V
G
V
G
G
V
0
=
0
=
1
–
1
–
=
0
3
V
A
μ
A
μ
V
S
e
G
S
S
S
0
0
0
1
1
–
±
4
–
t
e
g
e
S
e
r
n
VS
A
A
V
V
V
μ
m
4
0
0
–
5
–
5
–
0
0
=
=
=
4
–
2
e
c
n
a
m
d
A
1
3
4
5
1
e
c
n
a
e
R
e
S
-
O
e
c
o
S
-
D
c
S
1
2
3
,
S
=
=
G
S
S
1
9
2
,
,
0
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3LP02SP | P-Channel Silicon MOSFET(Ultrahigh-Speed Switching Applications)(超高速轉(zhuǎn)換應(yīng)用的P溝道硅MOSFET) |
| 3LP03M | 3LP03M |
| 3LP03SS | P-Channel Silicon MOSFET General-Purpose Switching Device |
| 3LP04MH | P-Channel Silicon MOSFET General-Purpose Switching Device |
| 3MBI150U-120 | IGBT Module U-Series 1200V / 150A 3 in one-package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3LP02N-AA | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETP CH50V0.14ATO-92 |
| 3LP02SP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 3LP03M | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:3LP03M |
| 3LP03M-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 0.25A SOT89 |
| 3LP03SS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。