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參數(shù)資料
| 型號(hào)： | 3LN04MH |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開(kāi)關(guān)設(shè)備 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | 3LN04MH |
3LN04MH
No. A0550-3/4
PD -- Ta
Ambient Temperature, Ta --
°
C
A
VGS -- Qg
SW Time -- ID
Ciss, Coss, Crss -- VDS
y
fs
-- ID
Drain Current, ID -- mA
S
Drain Current, ID -- mA
F
y
f
Drain-to-Source Voltage, VDS -- V
A S O
C
Total Gate Charge, Qg -- nC
G
Drain-to-Source Voltage, VDS -- V
D
IS -- VSD
Diode Forward Voltage, VSD -- V
S
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT11717
0
30
10
15
20
25
5
IT11716
10
100
1000
2
3
5
7
2
3
5
7
1.0
7
10
5
3
2
7
100
5
3
2
IT11715
IT11714
IT11713
1.0
100
10
10
2
3
5
7
100
2
2
3
5
7
3
5
71000
7
5
3
2
1000
7
5
3
2
3
2
0.8
1.0
0.6
1.2
1.4
0.2
0.4
0
1.0
100
10
7
5
3
2
7
5
3
2
1000
7
5
3
2
tf
tr
Crss
Coss
Ciss
VDS=10V
ID=350mA
VDS=10V
Ta=-25
°
C
75
°
C
25
°
C
10
100
7
5
7
3
3
2
2
VGS=0V
f=1MHz
2
°
C
-5
°
C
T
7
°
C
td(off)
td(on)
VDS=15V
VGS=4V
0
0
20
40
60
80
100
120
0.1
0.2
0.3
0.7
0.6
0.5
0.4
140
160
IT11708
IT11719
0.1
1.0
10
2
3
5
7
2
3
5
7
2
3
5
1.0
0.01
0.1
2
3
5
7
2
3
3
5
7
2
°
C
10m
IDP=1.4A
ID=0.35A
≤
10
μ
s
1m
Mounedonaceamcboad(900mm
2
08mm
Operation in this
area is limited by RDS(on).
μ
s
Ta=25
°
C
Single pulse
Mounted on a ceramic board (900mm
2
0.8mm)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3LN04MH-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 0.35A SOT89 |
| 3LN04S | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 3LN04SS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 3LN04SS-TL-H | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 0.35A SSFP |
| 3LN18 | 制造商:Thomas & Betts 功能描述: |
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