參數(shù)資料
型號: 3LN04MH
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device
中文描述: N溝道MOSFET的硅通用開關(guān)設(shè)備
文件頁數(shù): 2/4頁
文件大小: 45K
代理商: 3LN04MH
3LN04MH
No. A0550-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
Qgs
Qgd
VSD
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
IS=350mA, VGS=0V
0.87
0.39
0.14
0.86
nC
nC
nC
V
1.2
Package Dimensions
unit : mm (typ)
7019A-003
Switching Time Test Circuit
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0
0
0
2
1
2.0
0.65
0.3
0
0.15
1
2
3
0 to 0.02
PW=10
μ
s
D.C.
1%
P.G
50
G
S
D
ID=200mA
RL=75
VDD=15V
VOUT
3LN04MH
VIN
4V
0V
VIN
Rg
Rg=1.2k
ID -- VDS
20V
ID -- VGS
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
D
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
S
O
Gate-to-Source Voltage, VGS -- V
S
O
Ambient Temperature, Ta --
°
C
D
IT11711
IT11712
IT11709
IT11710
1
0
1.0
0
0.5
0
0
0
0.2
0.4
0.6
0.8
1.0
0
150
100
50
350
300
250
200
8
6
5.
2V
100
80
60
40
20
200
180
160
140
120
1.0
1.5
2.0
2.5
-
°
C
2
°
C
T
7
°
C
VDS=10V
2
3
4
5
6
7
8
1.5
2.5
3.0
3.5
0.5
2.0
4.0
1.0
0
--60
1.5
2.5
3.0
0.5
2.0
Ta=25
°
C
10mA
100mA
ID=200mA
--40
--20
0
20
40
60
80
100
120
160
140
ID=100mA, VGS=2.5V
ID=200mA, VGS=4.0V
ID=10mA, VGS=1.5V
VGS=1.5V
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