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參數(shù)資料
| 型號： | 32N50Q |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFET Power MOSFETs ISOPLUS247 |
| 中文描述： | HiPerFET功率MOSFET ISOPLUS247 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 92K |
| 代理商： | 32N50Q |
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= I
T
Note 2
18
28
S
C
iss
C
oss
C
rss
3950
640
210
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
35
42
75
20
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 1
(External),
Q
g(on)
Q
gs
Q
gd
150
26
85
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
thJC
0.40
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
32
A
I
SM
Repetitive; pulse width limited by T
JM
128
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
0.75
C
I
RM
7.5
A
I
= I
,
-di/dt = 100 A/ms,
V
R
= 100 V
Note: 1.
I
test condition:
IXFR30N50: I
T
= 15A
IXFR32N50: I
T
= 16A
Pulse test, t 300 s,
duty cycle d 2 %
IXFR 30N50Q
IXFR 32N50Q
Note: 2.
ISOPLUS 247 (IXFR) OUTLINE
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
e 5.45 BSC
L
19.81
L1
3.81
Q
5.59
R
4.32
S
13.21
T
15.75
U
1.65
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
A
A
1
A
2
b
b
1
b
2
C
D
E
20.32
4.32
6.20
4.83
13.72
16.26
3.03
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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