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參數(shù)資料
| 型號： | 32N50Q |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFET Power MOSFETs ISOPLUS247 |
| 中文描述： | HiPerFET功率MOSFET ISOPLUS247 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 92K |
| 代理商： | 32N50Q |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
30N50
32N50
30N50
32N50
30N50
32N50
30
A
I
DM
T
C
= 25 C, Pulse width limited by T
JM
120
A
I
AR
T
C
= 25 C
30
A
E
AS
E
AR
T
C
= 25 C
T
C
= 25 C
1.5
45
J
mJ
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
310
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
V~
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
500
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2
4
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
100
1
A
mA
R
DS(on)
V
= 10 V, I
D
= I
T
Notes 1, 2
30N50
32N50
0.16
0.15
98608B (7/00)
ISOPLUS 247
TM
E 153432
G
D
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Isolated back surface*
V
DSS
500 V
500 V
I
D25
29 A
30 A
R
DS(on)
0.16
0.15
IXFR 30N50Q
IXFR 32N50Q
t
rr
250 ns
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
rr
, HDMOS
TM
Family
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
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