參數(shù)資料
型號(hào)： 30A02MH
元件分類： 小信號(hào)晶體管
英文描述： Si, PNP, RF SMALL SIGNAL TRANSISTOR
封裝： MCPH3, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 28K
代理商： 30A02MH
30A02MH
No.7359-1/4
PNP Epitaxial Planar Silicon Transistor
Applications
Low-frequency Amplifier, high-speed switching,
small motor drive.
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=580m[IC=0.7A, IB=35mA].
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--30
V
Collector-to-Emitter Voltage
VCEO
--30
V
Emitter-to-Base Voltage
VEBO
--5
V
Collector Current
IC
--700
mA
Collector Current (Pulse)
ICP
--1.4
A
Collector Dissipation
PC
Mounted on a ceramic board (600mm2!0.8mm)
600
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--30V, IE=0
--100
nA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0
--100
nA
DC Current Gain
hFE
VCE=--2V, IC=--10mA
200
500
Gain-Bandwidth Product
fT
VCE=--10V, IC=--50mA
520
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
4.7
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--200mA, IB=--10mA
--110
--220
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--200mA, IB=--10mA
--0.9
--1.2
V
Marking : AL
Continued on next page.
Ordering number : ENN7359
30A02MH
O3003 TS IM TA-100125
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2194A
[30A02MH]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
2
3
12
3
(Bottom view)
(Top view)
相關(guān)PDF資料
PDF描述
30A02SP Si, PNP, RF SMALL SIGNAL TRANSISTOR
30A02SS Si, PNP, RF SMALL SIGNAL TRANSISTOR
30C02SS Si, NPN, RF SMALL SIGNAL TRANSISTOR
30C02S Si, NPN, RF SMALL SIGNAL TRANSISTOR
30CPQ100 15 A, 100 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
30A02MH-TL-E 功能描述:兩極晶體管 - BJT BIP PNP 0.7A 30V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
30A02MH-TL-H 功能描述:兩極晶體管 - BJT BIP PNP 0.7A 30V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
30A02SP-AC 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 30V 0.7A SPA
30A02SS 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amplifier Applications
30A030D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Industrial Control IC
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